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  er 2 a thru er 2 m 2 amp super fast recovery silicon rectifier 50 to 10 00 volts features for surface mount applications extremely low thermal resistance easy pick and place high temp soldering: 250 c for 10 seconds at terminals superfast recovery times for high efficiency maximum ratings electrical characteristics @ 25 c unless otherwise specified average forward current i f(av) 2 .0a t j = 75 c peak forward surge current i fsm 5 0a 8.3ms, half sine maximum instantaneous forward voltage v f i fm = 2 .0a; t j = 25 c* maximum dc reverse current at rated dc blocking voltage i r 5 m a 15 0 m a t j = 25 c t j = 1 00 c typical junction capacitance c j 25 pf measured at 1.0mhz, v r =4.0v *pulse test: pulse width 200 m sec, duty cycle 2% operating temperature: - 5 0 c to +15 0 c storage temperature: - 50 c to +15 0 c maximum thermal resistance; 20 c/w junction to lead m cc catalog number device marking maximum re current peak reverse voltage maximum rms voltage maximum dc blocking voltage er2m er 2 m 10 00v 70 0v 1000v er2a er 2 a 50v 35v 50v er2b er 2 b 100v 70v 100v ER2C er 2 c 150v 105v 150v er2d er 2 d 200v 140v 200v er2g er 2 g 400v 280v 400v er2j er 2 j 600v 420v 600v er2k er 2 k 8 00v 56 0v 8 00v maximum reverse recovery time t rr i f =0.5a, i r =1.0a, i rr =0.25a www. mccsemi .com do-214a a ( sm b j) ( round lead ) h j e f g a b d c cat hode b and 0.070? 0.090" 0.085? suggested solder pad layout dimensions inches mm dim min max min max note a . 078 .116 1.98 2.95 b .075 .089 1.90 2.25 c .002 .008 .05 . 20 d --- - - . 02 -- -- - .51 e .035 .055 . 90 1.40 f .065 .091 1.65 2.32 g . 205 .224 5.21 5.69 h .160 .180 4.06 4.57 j .130 .155 3.30 3.94 er 2 a-d 5 0 n s                       er 2 g-k 60 n s                       er 2 m 10 0 ns                       er 2 a-d . 97 5 v                       er 2 g-k 1. 35 v                       er 2 m 1. 6 0 v                               
 om p on ent s 21 20 1 i t a sc a s t ree t ch at s w or th               !  " #   $
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er 2 a thru er 2 m average forward rectified current - amperes versus ambient temperature - c figure 2 forward derating curve 0 15025 50 75 100 0 .2 .4 .6 .8 1.0 1.2 1.4 single phase, half wave 60hz resistive or inductive load amps c 125 1.6 1.8 2.0 2.2 2.4 figure 3 junction capacitance .1 .2 1 .4 2 10 20 404 100 200 1 2 6 10 20 100 junction capacitance - pf versus reverse voltage - volts pf volts 60 40 4 400 1000 t j =25 c mcc www. mccsemi .com instantaneous forward current - amperes versus instantaneous forward voltage - volts figure 1 typical forward characteris tics 4 6 20 10 amps .4 .8 1.2 1.6 2.0 2.4 .01 .02 .04 .06 .1 .2 .4 .6 1 2 volts e r 2a - 2d e r 2 g - 2k e r 2m
er 2 a thru er 2 m figure 5 new smb assembly round lead process t rr +0.5a 0 -0.25 -1.0 1cm set time base for 20/100ns/cm 25vdc 1 w 50 w 10 w oscilloscope note 1 pulse generator note 2 notes: 1. rise time = 7ns max. input impedance = 1 megohm, 22pf 2. rise time = 10ns max. source impedance = 50 ohms 3. resistors are non-inductive figure 6 reverse recovery time characteristic and test circuit diagram 1 100 4 0 10 20 30 8 figure 4 peak forward surge current peak forward surge current - amperes versus number of cycles at 60hz - cycles amps cycles 2 6 10 20 60 80 40 40 50 mcc www. mccsemi .com


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